"Proton induced trapping effect on space compatible GaN HEMTs."

Antonio Stocco et al. (2014)

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DOI: 10.1016/J.MICROREL.2014.07.120

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type: Journal Article

metadata version: 2024-05-07

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Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni:
Proton induced trapping effect on space compatible GaN HEMTs. Microelectron. Reliab. 54(9-10): 2213-2216 (2014)

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